검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F Solid-State Electronics, 50(3), 408, 2006 |
| 2 |
AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Chang W, Turner NH Solid-State Electronics, 47(2), 181, 2003 |
| 3 |
Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb Ikossi K, Goldenberg M, Mittereder J Solid-State Electronics, 46(10), 1627, 2002 |
| 4 |
Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing Papanicolaou NA, Rao MV, Mittereder J, Anderson WT Journal of Vacuum Science & Technology B, 19(1), 261, 2001 |
| 5 |
Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Bass R, Twigg ME Journal of Vacuum Science & Technology B, 17(3), 1022, 1999 |
| 6 |
Wet Chemical Etching with Lactic-Acid Solutions for InP-Based Semiconductor-Devices Ikossianastasiou K, Binari SC, Kelner G, Boos JB, Kyono CS, Mittereder J, Griffin GL Journal of the Electrochemical Society, 142(10), 3558, 1995 |