검색결과 : 17건
No. | Article |
---|---|
1 |
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) Park J, Mitchel WC, Grazulis L, Smith HE, Eyink KG, Boeckl JJ, Tomich DH, Pacley SD, Hoelscher JE Advanced Materials, 22(37), 4140, 2010 |
2 |
Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors Haugan HJ, Elhamri S, Ullrich B, Szmulowicz F, Brown GJ, Mitchel WC Journal of Crystal Growth, 311(7), 1897, 2009 |
3 |
InAs/GaSb type-II superlattices for high performance mid-infrared detectors Haugan HJ, Brown GJ, Smulowicz F, Grazulis L, Mitchel WC, Elhamri S, Mitchell WD Journal of Crystal Growth, 278(1-4), 198, 2005 |
4 |
Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC Zvanut ME, Konovalov VV, Mitchel WC, Mitchell WD Materials Science Forum, 457-460, 489, 2004 |
5 |
Photo-EPR and hall measurements on undoped high purity semi-insulating 4H-SiC substrates Kalabukhova EN, Lukin SN, Savchenko DV, Mitchel WC, Mitchell WD Materials Science Forum, 457-460, 501, 2004 |
6 |
High temperature Hall effect measurements of semi-insulating 4H-SiC substrates Mitchel WC, Mitchell WD, Zvanut ME, Landis G Solid-State Electronics, 48(10-11), 1693, 2004 |
7 |
Ohmic contact behavior of carbon films on SiC Lu WJ, Mitchel WC, Thornton CA, Collins WE, Landis GR, Smith SR Journal of the Electrochemical Society, 150(3), G177, 2003 |
8 |
Electrical contact behavior of Ni/C60/4H-SiC structures Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE Journal of Vacuum Science & Technology A, 21(4), 1510, 2003 |
9 |
Ohmic contact properties of Ni/C film on 4H-SiC Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE Solid-State Electronics, 47(11), 2001, 2003 |
10 |
Assessment of polishing-related surface damage in silicon carbide Sanchez EK, Ha S, Grim J, Skowronski M, Vetter WM, Dudley M, Bertke R, Mitchel WC Journal of the Electrochemical Society, 149(2), G131, 2002 |