화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Park J, Mitchel WC, Grazulis L, Smith HE, Eyink KG, Boeckl JJ, Tomich DH, Pacley SD, Hoelscher JE
Advanced Materials, 22(37), 4140, 2010
2 Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors
Haugan HJ, Elhamri S, Ullrich B, Szmulowicz F, Brown GJ, Mitchel WC
Journal of Crystal Growth, 311(7), 1897, 2009
3 InAs/GaSb type-II superlattices for high performance mid-infrared detectors
Haugan HJ, Brown GJ, Smulowicz F, Grazulis L, Mitchel WC, Elhamri S, Mitchell WD
Journal of Crystal Growth, 278(1-4), 198, 2005
4 Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC
Zvanut ME, Konovalov VV, Mitchel WC, Mitchell WD
Materials Science Forum, 457-460, 489, 2004
5 Photo-EPR and hall measurements on undoped high purity semi-insulating 4H-SiC substrates
Kalabukhova EN, Lukin SN, Savchenko DV, Mitchel WC, Mitchell WD
Materials Science Forum, 457-460, 501, 2004
6 High temperature Hall effect measurements of semi-insulating 4H-SiC substrates
Mitchel WC, Mitchell WD, Zvanut ME, Landis G
Solid-State Electronics, 48(10-11), 1693, 2004
7 Ohmic contact behavior of carbon films on SiC
Lu WJ, Mitchel WC, Thornton CA, Collins WE, Landis GR, Smith SR
Journal of the Electrochemical Society, 150(3), G177, 2003
8 Electrical contact behavior of Ni/C60/4H-SiC structures
Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE
Journal of Vacuum Science & Technology A, 21(4), 1510, 2003
9 Ohmic contact properties of Ni/C film on 4H-SiC
Lu WJ, Mitchel WC, Landis GR, Crenshaw TR, Collins WE
Solid-State Electronics, 47(11), 2001, 2003
10 Assessment of polishing-related surface damage in silicon carbide
Sanchez EK, Ha S, Grim J, Skowronski M, Vetter WM, Dudley M, Bertke R, Mitchel WC
Journal of the Electrochemical Society, 149(2), G131, 2002