검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High-power 1.3 mu m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system Wilk A, Kovsh AR, Mikhrin SS, Chaix C, Novikov II, Maximov MV, Shernyakov YM, Ustinov VM, Ledentsov NN Journal of Crystal Growth, 278(1-4), 335, 2005 |
| 2 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with enhanced optical gain Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasil'ev AP, Semenova EA, Shernyakov YM, Maximov MV, Livshits DA, Ustinov VM, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 251(1-4), 729, 2003 |
| 3 |
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots Maleev NA, Sakharov AV, Moeller C, Krestnikov IL, Kovsh AR, Mikhrin SS, Zhukov AE, Ustinov VM, Passenberg W, Pawlowski E, Kunezel H, Tsatsul'nikov AF, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 227, 1146, 2001 |
| 4 |
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D Journal of Crystal Growth, 227, 1155, 2001 |