검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
ON-state characteristics of proton irradiated 4H-SiC Schottky diode: The calibration of model parameters for device simulation Vobecky J, Hazdra P, Zahlava V, Mihaila A, Berthou M Solid-State Electronics, 94, 32, 2014 |
| 2 |
Performance of SiC Cascode Switches with Si MOS Gate Brezeanu G, Boianceanu C, Brezeanu M, Mihaila A, Udrea F, Amaratunga G Materials Science Forum, 483, 825, 2005 |
| 3 |
Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs Rashid SJ, Mihaila A, Udrea F, Malhan RK, Amaratunga G Materials Science Forum, 457-460, 1441, 2004 |
| 4 |
Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination Brezeanu G, Godignon P, Dimitrova E, Raynaud C, Planson D, Mihaila A, Udrea F, Milian J, Amaratunga G, Boianceanu C Materials Science Forum, 457-460, 1495, 2004 |
| 5 |
A field effect transistor using highly nitrogen-doped CVD diamond for power device applications Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K Applied Surface Science, 216(1-4), 483, 2003 |
| 6 |
A numerical comparison between MOS control and junction control high voltage devices in SiC technology Mihaila A, Udrea F, Brezeanu G, Amaratunga G Solid-State Electronics, 47(4), 607, 2003 |
| 7 |
Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches Mihaila A, Udrea F, Azar R, Brezeanu G, Amaratunga G Materials Science Forum, 389-3, 1239, 2002 |
| 8 |
Silicon/oxide/silicon carbide (SiOSiC) - A new approach for high voltage, high frequencies integrated circuits Udrea F, Mihaila A, Azar R Materials Science Forum, 389-3, 1255, 2002 |
| 9 |
An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors Brezeanu G, Badila M, Godignon P, Millan J, Udrea F, Mihaila A, Amaratunga G Materials Science Forum, 389-3, 1301, 2002 |
| 10 |
Novel buried field rings edge termination for 4H-SiC high-voltage devices Mihaila A, Udrea F, Godignon P, Trajkovic T, Brezeanu G, Rebollo J, Millan J Materials Science Forum, 433-4, 891, 2002 |