화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers
Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H
Journal of Crystal Growth, 507, 70, 2019
2 Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
Salvalaglio M, Bergamaschini R, Backofen R, Voigt A, Montalenti F, Miglio L
Applied Surface Science, 391, 33, 2017
3 Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
Bergamaschini R, Salvalaglio M, Scaccabarozzi A, Isa F, Falub CV, Isella G, von Kanel H, Montalenti F, Miglio L
Journal of Crystal Growth, 440, 86, 2016
4 Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates
Scaccabarozzi A, Bietti S, Fedorov A, von Kanel H, Miglio L, Sanguinetti S
Journal of Crystal Growth, 401, 559, 2014
5 3D heteroepitaxy of mismatched semiconductors on silicon
Falub CV, Kreiliger T, Isa F, Taboada AG, Meduna M, Pezzoli F, Bergamaschini R, Marzegalli A, Muller E, Chrastina D, Isella G, Neels A, Niedermann P, Dommann A, Miglio L, von Kanel H
Thin Solid Films, 557, 42, 2014
6 Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning
Marzegalli A, Isa F, Groiss H, Muller E, Falub CV, Taboada AG, Niedermann P, Isella G, Schaffler F, Montalenti F, von Kanel H, Miglio L
Advanced Materials, 25(32), 4408, 2013
7 Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals
Falub CV, von Kanel H, Isa F, Bergamaschini R, Marzegalli A, Chrastina D, Isella G, Muller E, Niedermann P, Miglio L
Science, 335(6074), 1330, 2012
8 Integration of MOSFETs with SiGe dots as stressor material
Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
Solid-State Electronics, 60(1), 75, 2011
9 Strained MOSFETs on ordered SiGe dots
Cervenka J, Kosina H, Selberherr S, Zhang JJ, Hrauda N, Stangl J, Bauer G, Vastola G, Marzegalli A, Montalenti F, Miglio L
Solid-State Electronics, 65-66, 81, 2011
10 Electronic properties of semiconducting silicides: fundamentals and recent predictions
Ivanenko LI, Shaposhnikov VL, Filonov AB, Krivosheeva AV, Borisenka VE, Migas DB, Miglio L, Behr G, Schumann J
Thin Solid Films, 461(1), 141, 2004