검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Dislocation conversion in 4H silicon carbide epitaxy Ha S, Mieszkowski P, Skowronski M, Rowland LB Journal of Crystal Growth, 244(3-4), 257, 2002 |
| 2 |
Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers Ha S, Mieszkowski P, Rowland LB, Skowronski M Materials Science Forum, 389-3, 231, 2002 |