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| No. | Article |
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| 1 |
Device performance of p-Ge MOSFETs at liquid nitrogen temperature Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C Thin Solid Films, 518(9), 2513, 2010 |