| 1 |
Piezoelectric and pyroelectric effects induced by interface polar symmetry
Yang MM, Luo ZD, Mi Z, Zhao JJ, Pei ES, Alexe M
Nature, 584(7821), 377, 2020 |
| 2 |
Piezoelectric and pyroelectric effects induced by interface polar symmetry
Yang MM, Luo ZD, Mi Z, Zhao JJ, Pei ES, Alexe M
Nature, 584(7821), 377, 2020 |
| 3 |
Stable Radical Cation-Containing Covalent Organic Frameworks Exhibiting Remarkable Structure-Enhanced Photothermal Conversion
Mi Z, Yang P, Wang R, Unruangsri J, Yang WL, Wang CC, Guo J
Journal of the American Chemical Society, 141(36), 14433, 2019 |
| 4 |
Open-loop solar tracking strategy for high concentrating photovoltaic systems using variable tracking frequency
Mi Z, Chen JK, Chen NF, Bai YM, Fu R, Liu H
Energy Conversion and Management, 117, 142, 2016 |
| 5 |
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Li KH, Liu X, Wang Q, Zhao S, Mi Z
Nature Nanotechnology, 10(2), 140, 2015 |
| 6 |
Quantum dot lasers: From promise to high-performance devices
Bhattacharya P, Mi Z, Yang J, Basu D, Saha D
Journal of Crystal Growth, 311(7), 1625, 2009 |
| 7 |
Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy
Zhang M, Moore J, Mi Z, Bhattacharya P
Journal of Crystal Growth, 311(7), 2069, 2009 |
| 8 |
Molecular beam epitaxial growth and characteristics of 1.52 mu m metamorphic InAs quantum dot lasers on GaAs
Mi Z, Wu C, Yang J, Bhattacharya P
Journal of Vacuum Science & Technology B, 26(3), 1153, 2008 |
| 9 |
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45 mu m metamorphic InAs quantum dot lasers on GaAs
Mi Z, Yang J, Bhattacharya P
Journal of Crystal Growth, 301, 923, 2007 |
| 10 |
High performance self-organized InGaAs quantum dot lasers on silicon
Mi Z, Yang J, Bhattacharya P, Chan PKL, Pipe KP
Journal of Vacuum Science & Technology B, 24(3), 1519, 2006 |
