화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept
Meziere J, Ucar M, Blanquet E, Pons M, Ferret P, Di Cioccio L
Journal of Crystal Growth, 267(3-4), 436, 2004
2 Nitrogen doping of epitaxial SiC: Experimental evidence of the re-incorporation of etched nitrogen during growth
Meziere J, Ferret P, Blanquet E, Pons M, Di Cioccio L, Billon T
Materials Science Forum, 457-460, 731, 2004
3 Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
Pons M, Meziere J, Kuan SWT, Blanquet E, Ferret P, Di Cioccio L, Billon T, Madar R
Materials Science Forum, 389-3, 223, 2002
4 Experiment and modeling of the large-area etching and growth rate of epitaxial SiC
Meziere J, Pons M, Dedulle JM, Blanquet E, Ferret P, Di Cioccio L, Billon T
Materials Science Forum, 433-4, 141, 2002
5 Computation of elastic properties of fabrics used in composite materials
Dal Maso F, Meziere J
Revue de l Institut Francais du Petrole, 53(6), 857, 1998