화학공학소재연구정보센터
검색결과 : 149건
No. Article
1 Preparation and characterisation of aluminium zirconium oxide formetal-oxide-semiconductorcapacitor
Quah HJ, Hassan Z, Lim WF
International Journal of Energy Research, 44(13), 10562, 2020
2 [기획특집: 센서소재의 최신개발동향] 산화물 반도체를 이용한 실내 공기질 가스 센서 연구동향
이건호, 이종흔
Korean Industrial Chemistry News, 23(3), 32, 2020
3 Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs
Dubecky F, Zatko B, Kolesar V, Kindl D, Hubik P, Gombia E, Dubecky M
Applied Surface Science, 467, 1219, 2019
4 Negative quantum capacitance effect from Bi2Te1.5Se1.5 with frequency dependent capacitance of polyvinyl alcohol (PVA) film in MOS structure
Choi H, Park J, Shim JW, Shin C
Applied Surface Science, 463, 1046, 2019
5 Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M
Journal of Crystal Growth, 512, 223, 2019
6 Organolead halide perovskite-based metal-oxide-semiconductor structure photodetectors achieving ultrahigh detectivity
Wang YC, Zhang YM, Pang TQ, Sun K, Hu ZY, Zhu YJ, Jia RX
Solar Energy, 183, 226, 2019
7 Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors
Manikanthababu N, Saikiran V, Basu T, Prajna K, Vajandar S, Pathak AP, Panigrahi BK, Osipowicz T, Rao SVSN
Thin Solid Films, 682, 156, 2019
8 Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
Mallem K, Chandra SVJ, Ju M, Dutta S, Phanchanan S, Sanyal S, Pham DP, Hussain SQ, Kim Y, Park J, Cho YH, Cho EC, Yi J
Thin Solid Films, 675, 16, 2019
9 Chemical state of phosphorous at the SiC/SiO2 interface
Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T, Feldman LC, Stedile FC
Thin Solid Films, 675, 172, 2019
10 A terahertz performance of hybrid single walled CNT based amplifier with analytical approach
Kumar S, Song H
Solid-State Electronics, 139, 1, 2018