검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers Kudrawiec R, Sitarek P, Gladysiewicz M, Misiewicz J, He Y, Jin Y, Vardar G, Mintarov AM, Merz JL, Goldman RS, Yu KM, Walukiewicz W Thin Solid Films, 567, 101, 2014 |
| 2 |
Quantum-dot cellular automata Snider GL, Orlov AO, Amlani I, Zuo X, Bernstein GH, Lent CS, Merz JL, Porod W Journal of Vacuum Science & Technology A, 17(4), 1394, 1999 |
| 3 |
Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H-2/O-2/Ar reactive ion etching Schramm JE, Babic DI, Hu EL, Bowers JE, Merz JL Journal of Vacuum Science & Technology B, 15(6), 2031, 1997 |
| 4 |
Ion induced damage in strained CdZnSe/ZnSe quantum well structures Sparing LM, Wang PD, Mintairov AM, Lee S, Bindley U, Chen CH, Shi SS, Furdyna JK, Merz JL, Snider GL Journal of Vacuum Science & Technology B, 15(6), 2652, 1997 |
| 5 |
Optical spectroscopy of MBE grown AlGaAs/GaAs quantum wells at various acceptor doping levels Ferreira AC, Holtz PO, Buyanova I, Monemar B, Sundaram M, Merz JL, Gossard AC Thin Solid Films, 306(2), 244, 1997 |
| 6 |
Photoluminescence Blueshift Induced by Reactive Ion Etching of Strained Cdznse/ZnSe Quantum-Well Structures Sparing LM, Wang PD, Xin SH, Short SW, Shi SS, Furdyna JK, Merz JL, Snider GL Journal of Vacuum Science & Technology B, 14(6), 3654, 1996 |
| 7 |
Molecular-Beam Epitaxy Growth of Quantum Dots from Strained Coherent Uniform Islands of InGaAs on GaAs Leonard D, Krishnamurthy M, Fafard S, Merz JL, Petroff PM Journal of Vacuum Science & Technology B, 12(2), 1063, 1994 |
| 8 |
Structural and Optical-Properties of Self-Assembled InGaAs Quantum Dots Leonard D, Fafard S, Pond K, Zhang YH, Merz JL, Petroff PM Journal of Vacuum Science & Technology B, 12(4), 2516, 1994 |
| 9 |
Highly Selective Reactive Ion Etch Process for InP-Based Device Fabrication Using Methane Hydrogen Argon Schramm JE, Hu EL, Merz JL, Brown JJ, Melendes MA, Thompson MA, Brown AS Journal of Vacuum Science & Technology B, 11(6), 2280, 1993 |