화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Two cryogenic processes involving SF6, O-2, and SiF4 for silicon deep etching
Tillocher T, Dussart R, Overzet LJ, Mellhaoui X, Lefaucheux P, Boufnichel M, Ranson P
Journal of the Electrochemical Society, 155(3), D187, 2008
2 Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas
Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T
Journal of Vacuum Science & Technology B, 25(5), 1640, 2007
3 Oxidation threshold in silicon etching at cryogenic temperatures
Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ
Journal of Vacuum Science & Technology A, 24(4), 1073, 2006