검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Nitridation of epitaxially grown 6.1 angstrom semiconductors studied by X-ray photoelectron spectroscopy Preisler EJ, Strittmatter RP, McGill TC, Hill CJ Applied Surface Science, 222(1-4), 6, 2004 |
| 2 |
Pulsed laser deposition growth of Fe3O4 on III-V semiconductors for spin injection Preisler EJ, Brooke J, Oldham NC, McGill TC Journal of Vacuum Science & Technology B, 21(4), 1745, 2003 |
| 3 |
Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation Oldham NC, Hill CJ, Garland CM, McGill TC Journal of Vacuum Science & Technology A, 20(3), 809, 2002 |
| 4 |
Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy Preisler EJ, Marsh OJ, Beach RA, McGill TC Journal of Vacuum Science & Technology B, 19(4), 1611, 2001 |
| 5 |
Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer Cheng XC, McGill TC Journal of Crystal Growth, 208(1-4), 183, 2000 |
| 6 |
Nickel layers on indium arsenide Hill CJ, Beach RA, McGill TC Journal of Vacuum Science & Technology B, 18(4), 2044, 2000 |
| 7 |
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices Bandic ZZ, Bridger PM, Piquette EC, McGill TC Solid-State Electronics, 44(2), 221, 2000 |
| 8 |
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire Piquette EC, Bridger PM, Bandic ZZ, McGill TC Journal of Vacuum Science & Technology B, 17(3), 1241, 1999 |
| 9 |
Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain Bridger PM, Bandic ZZ, Piquette EC, McGill TC Journal of Vacuum Science & Technology B, 17(4), 1750, 1999 |
| 10 |
Piezoelectric fields in nitride devices Beach RA, McGill TC Journal of Vacuum Science & Technology B, 17(4), 1753, 1999 |