화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 99.992% Si-28 CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
Mazzocchi V, Sennikov PG, Bulanov AD, Churbanov MF, Bertrand B, Hutin L, Barnes JP, Drozdov MN, Hartmann JM, Sanquer M
Journal of Crystal Growth, 509, 1, 2019
2 High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs
Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M
Solid-State Electronics, 59(1), 2, 2011
3 High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S
Solid-State Electronics, 53(7), 723, 2009