검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates Guan YX, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF Journal of Crystal Growth, 464, 39, 2017 |
| 2 |
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning Kim H, Choi J, Lingley Z, Brodie M, Sin Y, Kuech TF, Gopalan P, Mawst LJ Journal of Crystal Growth, 465, 48, 2017 |
| 3 |
Regrowth of quantum cascade laser active regions on metamorphic buffer layers Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li XQ, Sigler C, Babcock SE, Earles T Journal of Crystal Growth, 452, 268, 2016 |
| 4 |
Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ Journal of Crystal Growth, 452, 276, 2016 |
| 5 |
Properties of'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration Kim TW, Forghani K, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC Journal of Crystal Growth, 393, 70, 2014 |
| 6 |
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Forghani K, Guan YX, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF Journal of Crystal Growth, 395, 38, 2014 |
| 7 |
Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application Kim TW, Kuech TF, Mawst LJ Journal of Crystal Growth, 405, 87, 2014 |
| 8 |
InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition Kim Y, Kim K, Kim TW, Mawst LJ, Kuech TF, Kim CZ, Park WK, Lee J Solar Energy, 102, 126, 2014 |
| 9 |
Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE) Kim TW, Garrod TJ, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC Journal of Crystal Growth, 370, 163, 2013 |
| 10 |
InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A Journal of Crystal Growth, 370, 230, 2013 |