검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Self-assembled InAs island formation on GaAs (110) by metalorganic vapor phase epitaxy Aierken A, Hakkarainen T, Sopanen M, Riikonen J, Sormunen J, Mattila M, Lipsanen H Applied Surface Science, 254(7), 2072, 2008 |
| 2 |
Comparison of H-2 and N-2 as carrier gas in MOVPE growth of InGaAsN quantum wells Reentila O, Mattila M, Knuuttila L, Hakkarainen T, Soparlen M, Lipsanen H Journal of Crystal Growth, 298, 536, 2007 |
| 3 |
Catalyst-free fabrication of InP and InP(N) nanowires by metalorganic vapor phase epitaxy Mattila M, Hakkarainen T, Lipsanen H Journal of Crystal Growth, 298, 640, 2007 |
| 4 |
Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110) Alerken A, Hakkarainen T, Tiflikainen J, Mattila M, Riikonen J, Sopanen M, Lipsanen H Journal of Crystal Growth, 309(1), 18, 2007 |
| 5 |
Improving the robustness of particle size analysis by multivariate statistical process control Mattila M, Saloheimo K, Koskinen K Particle & Particle Systems Characterization, 24(3), 173, 2007 |
| 6 |
Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth Reentila O, Mattila M, Sopanen M, Lipsanen H Journal of Crystal Growth, 290(2), 345, 2006 |
| 7 |
The morphology of an InP wetting layer on GaAs Mattila M, Sopanen M, Lipsanen H Applied Surface Science, 229(1-4), 333, 2004 |
| 8 |
Passivation of GaAs surface by ultrathin epitaxial GaN layer Riikonen J, Sormunen J, Koskenvaara H, Mattila M, Sopanen M, Lipsanen H Journal of Crystal Growth, 272(1-4), 621, 2004 |