1 |
Determination of the Peltier coefficient for gallium arsenide in a vertical Bridgman furnace Wiegel MEK, Matthiesen DH Journal of Crystal Growth, 333(1), 20, 2011 |
2 |
Infrared absorption and electrical properties of AgGaSe2 Whittaker MT, Stenger TE, Krause DG, Matthiesen DH Journal of Crystal Growth, 310(7-9), 1904, 2008 |
3 |
Statistical comparison between inductively coupled plasma-mass spectrometry, and Hall effect techniques using antimony-doped germanium Keefer LA, Matthiesen DH Journal of Crystal Growth, 250(1-2), 229, 2003 |
4 |
Proceedings of the Twelfth American Conference on Crystal Growth and Epitaxy Vail, Colorado, USA, 13-18 August 2000 - Preface Matthiesen DH Journal of Crystal Growth, 225(2-4), XI, 2001 |
5 |
Comparison of inductively coupled plasma-mass spectrometry, neutron activation analysis, and Hall effect techniques using antimony doped germanium Keefer LA, Matthiesen DH Journal of Crystal Growth, 225(2-4), 231, 2001 |
6 |
Design of ceramic springs for use in semiconductor crystal growth in microgravity Kaforey ML, Deeb CW, Matthiesen DH Journal of Crystal Growth, 211(1-4), 421, 2000 |
7 |
Physical modeling of the effect of shearing on the concentration profile in a shear cell Matthiesen DH, Davidson K, Arnold WA Journal of the Electrochemical Society, 146(8), 3087, 1999 |