검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ab initio study of dopant ifiterstitials in 4H-SiC Mattausch A, Bockstedte M, Pankratov O Materials Science Forum, 483, 523, 2005 |
| 2 |
Kinetic aspects of the interstitial-mediated boron diffusion in SiC Bockstedte M, Mattausch A, Pankratov O Materials Science Forum, 483, 527, 2005 |
| 3 |
A theoretical study of carbon clusters in SiC: a sink and a source of carbon interstitials Mattausch A, Bockstedte M, Pankratov O Materials Science Forum, 457-460, 449, 2004 |
| 4 |
The solubility and defect equilibrium of the n-type dopants nitrogen and phosphorus in 4H-SiC: a theoretical study Bockstedte M, Mattausch A, Pankratov O Materials Science Forum, 457-460, 715, 2004 |
| 5 |
The nature and diffusion of intrinsic point defects in SiC Bockstedte M, Heid M, Mattausch A, Pankratov O Materials Science Forum, 389-3, 471, 2002 |
| 6 |
Carbon interstitials in SiC: A model for the D-II center Mattausch A, Bockstedte M, Pankratov O Materials Science Forum, 389-3, 481, 2002 |
| 7 |
Identification and annealing of common intrinsic defect centers Bockstedte M, Heid M, Mattausch A, Pankratov O Materials Science Forum, 433-4, 471, 2002 |
| 8 |
Self diffusion in SiC: the role of intrinsic point defects Mattausch A, Bockstedte M, Pankratov O Materials Science Forum, 353-356, 323, 2001 |
| 9 |
Boron in SiC: Structure and kinetics Bockstedte M, Mattausch A, Pankratov O Materials Science Forum, 353-356, 447, 2001 |