화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires
Frigeri C, Scarpellini D, Fedorov A, Bietti S, Somaschini C, Grillo V, Esposito L, Salvalaglio M, Marzegalli A, Montalenti F, Sanguinetti S
Applied Surface Science, 395, 29, 2017
2 3D heteroepitaxy of mismatched semiconductors on silicon
Falub CV, Kreiliger T, Isa F, Taboada AG, Meduna M, Pezzoli F, Bergamaschini R, Marzegalli A, Muller E, Chrastina D, Isella G, Neels A, Niedermann P, Dommann A, Miglio L, von Kanel H
Thin Solid Films, 557, 42, 2014
3 Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning
Marzegalli A, Isa F, Groiss H, Muller E, Falub CV, Taboada AG, Niedermann P, Isella G, Schaffler F, Montalenti F, von Kanel H, Miglio L
Advanced Materials, 25(32), 4408, 2013
4 Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals
Falub CV, von Kanel H, Isa F, Bergamaschini R, Marzegalli A, Chrastina D, Isella G, Muller E, Niedermann P, Miglio L
Science, 335(6074), 1330, 2012
5 Integration of MOSFETs with SiGe dots as stressor material
Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E
Solid-State Electronics, 60(1), 75, 2011
6 Strained MOSFETs on ordered SiGe dots
Cervenka J, Kosina H, Selberherr S, Zhang JJ, Hrauda N, Stangl J, Bauer G, Vastola G, Marzegalli A, Montalenti F, Miglio L
Solid-State Electronics, 65-66, 81, 2011