검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Light emission enhancement from Ge quantum dots with phosphorous delta-doped neighboring confinement structures Sawano K, Nakama T, Mizutani K, Harada N, Xu X, Maruizumi T Journal of Crystal Growth, 477, 131, 2017 |
| 2 |
Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy Nishida K, Xu XJ, Sawano K, Maruizumi T, Shiraki Y Thin Solid Films, 557, 66, 2014 |
| 3 |
Microdisk enhanced photodetector based on Ge self-assembled quantum dots on silicon-on-insulator Xu XJ, Chiba T, Maruizumi T, Shiraki Y Thin Solid Films, 557, 363, 2014 |
| 4 |
Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature Xu XJ, Usami N, Maruizumi T, Shiraki Y Journal of Crystal Growth, 378, 636, 2013 |
| 5 |
The role of hydrogen migration in negative-bias temperature instability Ushio J, Watanabe K, Kushida-Abdelghafar K, Maruizumi T Applied Surface Science, 216(1-4), 258, 2003 |
| 6 |
New intrinsic pair defects in silicon dioxide interface Kitagawa I, Maruizumi T Applied Surface Science, 216(1-4), 264, 2003 |
| 7 |
Simulation of dislocation accumulation in ULSI cells with STI structure Ohashi T, Sato M, Maruizumi T, Kitagawa I Applied Surface Science, 216(1-4), 340, 2003 |
| 8 |
Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces Schulte J, Ushio J, Maruizumi T Thin Solid Films, 369(1-2), 285, 2000 |