검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Method of electron affinity evaluation for the type-2 InAs/InAs1-xSbx superlattice Manyk T, Murawski K, Michalczewski K, Grodecki K, Rutkowski J, Martyniuk P Journal of Materials Science, 55(12), 5135, 2020 |
| 2 |
Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Grodecki K, Martyniuk P Journal of Crystal Growth, 522, 125, 2019 |
| 3 |
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Martyniuk P, Piotrowski J, Rogalski A Journal of Crystal Growth, 483, 26, 2018 |
| 4 |
X-ray and Raman determination of InAsSb mole fraction for x < 0.5 Murawski K, Grodecki K, Benyahia D, Wysmolek A, Jankiewicz B, Martyniuk P Journal of Crystal Growth, 498, 137, 2018 |
| 5 |
Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors Gawron W, Martyniuk P, Keblowski A, Kolwas K, Stepien D, Piotrowski J, Madejczyk P, Pedzinska M, Rogalski A Solid-State Electronics, 118, 61, 2016 |
| 6 |
Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition Martyniuk P, Benyahia D, Kowalewski A, Kubiszyn L, Stepien D, Gawron W, Rogalski A Solid-State Electronics, 119, 1, 2016 |
| 7 |
Modelling of MWIR HgCdTe complementary barrier HOT detector Martyniuk P, Rogalski A Solid-State Electronics, 80, 96, 2013 |