검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition Marcos G, Rhallabi A, Ranson P Applied Surface Science, 254(11), 3576, 2008 |
| 2 |
Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations Rhallabi A, Gaillard M, Elmonser L, Marcos G, Talneau A, Pommereau F, Pagnod-Rossiaux P, Landesman JP, Bouadma N Journal of Vacuum Science & Technology B, 23(5), 1984, 2005 |
| 3 |
Topographic and kinetic effects of the SF6/O-2 rate during a cryogenic etching process of silicon Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology B, 22(4), 1912, 2004 |
| 4 |
Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O-2 plasma mixture Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology A, 21(1), 87, 2003 |