검색결과 : 3건
No. | Article |
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1 |
Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures Egorov AY, Odnobludov VA, Mamutin VV, Zhukov AE, Tsatsul'nikov AF, Kryzhanovskaya NV, Ustinov VM, Hong YG, Tu CW Journal of Crystal Growth, 251(1-4), 417, 2003 |
2 |
Physical properties of InN with the band gap energy of 1.1eV Inushima T, Mamutin VV, Vekshin VA, Ivanov SV, Sakon T, Motokawa M, Ohoya S Journal of Crystal Growth, 227, 481, 2001 |
3 |
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties Mamutin VV, Shubina TV, Vekshin VA, Ratnikov VV, Toropov AA, Ivanov SV, Karlsteen M, Sodervall U, Willander M Applied Surface Science, 166(1-4), 87, 2000 |