화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
Egorov AY, Odnobludov VA, Mamutin VV, Zhukov AE, Tsatsul'nikov AF, Kryzhanovskaya NV, Ustinov VM, Hong YG, Tu CW
Journal of Crystal Growth, 251(1-4), 417, 2003
2 Physical properties of InN with the band gap energy of 1.1eV
Inushima T, Mamutin VV, Vekshin VA, Ivanov SV, Sakon T, Motokawa M, Ohoya S
Journal of Crystal Growth, 227, 481, 2001
3 Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
Mamutin VV, Shubina TV, Vekshin VA, Ratnikov VV, Toropov AA, Ivanov SV, Karlsteen M, Sodervall U, Willander M
Applied Surface Science, 166(1-4), 87, 2000