검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen Y, Kimoto T, Takeuchi Y, Malhan RK, Matsunami H Materials Science Forum, 457-460, 189, 2004 |
| 2 |
Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs Rashid SJ, Mihaila A, Udrea F, Malhan RK, Amaratunga G Materials Science Forum, 457-460, 1441, 2004 |
| 3 |
Physical mechanism for the anomalous behavior of n-type dopants in SiC Malhan RK, Kozima J, Yamamoto T, Fukumoto A Materials Science Forum, 389-3, 541, 2002 |
| 4 |
Micro-structural and electrical properties of Al-implanted & lamp-annealed 4H-SiC Nakamura H, Watanabe H, Yamazaki J, Tanaka N, Malhan RK Materials Science Forum, 389-3, 807, 2002 |
| 5 |
Impact of SiC structural defects on the degradation phenomenon of bipolar SiC devices Malhan RK, Nakamura H, Onda S, Nakamura D, Hara K Materials Science Forum, 433-4, 917, 2002 |
| 6 |
Effect of C/B sequential implantation on the B acceptors in 4H-SiC Nakano Y, Kachi T, Tadano H, Malhan RK Journal of Crystal Growth, 210(1-3), 283, 2000 |