| 1 |
Study on electroluminescence from multiply-stacking valency controlled Si quantum dots
Yamada T, Makihara K, Ohta A, Ikeda M, Miyazaki S
Thin Solid Films, 602, 48, 2016 |
| 2 |
Evaluation of field emission properties from multiple-stacked Si quantum dots
Takeuchi D, Makihara K, Ohta A, Ikeda M, Miyazaki S
Thin Solid Films, 602, 68, 2016 |
| 3 |
Epitaxial growth of Ni films sputter-deposited on a GaAs(001) surface covered with a MgO film
Makihara K, Maruyama S, Zota Y, Hashimoto M, Shi J
Thin Solid Films, 520(23), 6831, 2012 |
| 4 |
High-density formation of Ge quantum dots on SiO2
Makihara K, Ikeda M, Ohta A, Takeuchi S, Shimura Y, Zaima S, Miyazaki S
Solid-State Electronics, 60(1), 65, 2011 |
| 5 |
Formation and characterization of hybrid nanodot stack structure for floating gate application
Miyazaki S, Makihara K, Ikeda M
Thin Solid Films, 518, S30, 2010 |
| 6 |
Control of electronic charged states of Si-based quantum dots for floating gate application
Miyazaki S, Makihara K, Ikeda M
Thin Solid Films, 517(1), 41, 2008 |
| 7 |
Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH(4)
Sakata T, Makihara K, Deki H, Higashi S, Miyazaki S
Thin Solid Films, 517(1), 216, 2008 |
| 8 |
Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics
Makihara K, Ikeda M, Higashi S, Miyazaki S
Thin Solid Films, 517(1), 306, 2008 |
| 9 |
Growth of crystallized ge films from VHF inductively-coupled plasma of H-2-diluted GeH4
Sakata T, Makihara K, Murakami H, Higashi S, Miyazaki S
Thin Solid Films, 515(12), 4971, 2007 |
| 10 |
Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
Makihara K, Xu J, Ikeda M, Murakami H, Higashi S, Miyazaki S
Thin Solid Films, 508(1-2), 186, 2006 |
