| 1 |
Defect luminescence of GaN grown by pulsed laser deposition
Mah KW, McGlynn E, Castro J, Lunney JG, Mosnier JP, O'Mahony D, Henry MO
Journal of Crystal Growth, 222(3), 497, 2001 |
| 2 |
Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy
Mah KW, Castro J, Costello JT, Kennedy ET, Lunney JG, McGlynn E, van Kampen P, Mosnier JP
Applied Surface Science, 168(1-4), 150, 2000 |
| 3 |
Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates
Yoon SF, Mah KW, Zheng HQ, Zhang PH
Journal of Crystal Growth, 208(1-4), 197, 2000 |
| 4 |
Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures
Zheng HQ, Yoon SF, Gay BP, Mah KW, Radhakrishnan K, Ng GI
Journal of Crystal Growth, 216(1-4), 51, 2000 |
| 5 |
Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell
Yoon SF, Zheng HQ, Zhang PH, Mah KW, Ng GI
Thin Solid Films, 326(1-2), 233, 1998 |
