검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA Journal of Crystal Growth, 478, 64, 2017 |
| 2 |
Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe Wang B, Wang C, Kohen DA, Made RI, Lee KEK, Kim T, Milakovich T, Fitzgerald EA, Yoon SF, Michel J Journal of Crystal Growth, 441, 78, 2016 |
| 3 |
Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films Khoo CY, Liu H, Sasangka WA, Made RI, Tamura N, Kunz M, Budiman AS, Gan CL, Thompson CV Journal of Materials Science, 51(4), 1864, 2016 |
| 4 |
Modeling of Electromigration Induced Contact Resistance Reduction of Cu-Cu Bonded Interface Made RI, Gan CL, Tan CS Journal of the Electrochemical Society, 158(4), H405, 2011 |