검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs Luo B, Ren F, Wu CS, Pearton SJ, Abernathy CR, MacKenzie KD Solid-State Electronics, 46(9), 1359, 2002 |
| 2 |
Comparison of the effects of deuterated SiNx films on GaN and GaAs rectifiers Luo B, Baik K, Ren F, Pearton SJ, MacKenzie KD Solid-State Electronics, 46(9), 1453, 2002 |
| 3 |
Effects of N-2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors Hsu CH, Chen CC, Luo B, Ren F, Pearton SJ, Abernathy CR, Lee JW, Mackenzie KD, Sasserath J Solid-State Electronics, 45(2), 275, 2001 |
| 4 |
Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN Kent DG, Lee KP, Zhang AP, Luo B, Overberg ME, Abernathy CR, Ren F, Mackenzie KD, Pearton SJ, Nakagawa Y Solid-State Electronics, 45(3), 467, 2001 |
| 5 |
Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs Lee JW, Jeon MH, Devre M, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F, Shul RJ Solid-State Electronics, 45(9), 1683, 2001 |
| 6 |
Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors Luo B, Ip K, Ren F, Lee KP, Abernathy CR, Pearton SJ, Mackenzie KD Solid-State Electronics, 45(10), 1733, 2001 |
| 7 |
Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Kent DG, Lee KP, Zhang AP, Luo B, Overberg ME, Abernathy CR, Ren F, Mackenzie KD, Pearton SJ, Nakagawa Y Solid-State Electronics, 45(10), 1837, 2001 |
| 8 |
Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition Lee JW, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F Journal of the Electrochemical Society, 147(4), 1481, 2000 |
| 9 |
Damage to III-V devices during electron cyclotron resonance chemical vapor deposition Lee JW, Mackenzie KD, Johnson D, Hahn YB, Hays DC, Abernathy CR, Ren F, Pearton SJ Journal of Vacuum Science & Technology A, 17(4), 2183, 1999 |