화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Orthodox etching of HVPE-grown GaN
Weyher JL, Lazar S, Macht L, Liliental-Weber Z, Molnar RJ, Muller S, Sivel VGM, Nowak G, Grzegory I
Journal of Crystal Growth, 305(2), 384, 2007
2 An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology
Macht L, Kelly JJ, Weyher JL, Grzegorczyk A, Larsen PK
Journal of Crystal Growth, 273(3-4), 347, 2005
3 Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
Grzegorczyk AP, Macht L, Hageman PR, Weyher JL, Larsen PK
Journal of Crystal Growth, 273(3-4), 424, 2005