화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source
Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G
Journal of Vacuum Science & Technology A, 25(4), 850, 2007
2 Factors Affecting the Temperature Uniformity of Semiconductor Substrates in Molecular-Beam Epitaxy
Johnson SR, Lavoie C, Nodwell E, Nissen MK, Tiedje T, Mackenzie JA
Journal of Vacuum Science & Technology B, 12(2), 1225, 1994