화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires
Mudusu D, Nandanapalli KR, Dugasani SR, Kang JW, Park SH, Tu CW
Current Applied Physics, 17(12), 1699, 2017
2 RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Amoroso SM, Gerrer L, Markov S, Adamu-Lema F, Asenov A
Solid-State Electronics, 84, 120, 2013
3 Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement
Reggiani S, Denison M, Gnani E, Gnudi A, Baccarani G, Pendharkar S, Wise R
Solid-State Electronics, 54(9), 950, 2010
4 Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data
Zhang Q, Liou JJ, McMacken J, Thomson JR, Stiles K, Layman P
Solid-State Electronics, 45(9), 1537, 2001