검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics Baert B, Schmeits M, Nguyen ND Applied Surface Science, 291, 25, 2014 |
| 2 |
Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics-semiconductor interfaces Ogata S, Ohno S, Tanaka M, Mori T, Horikawa T, Yasuda T Thin Solid Films, 519(9), 2830, 2011 |
| 3 |
Influence of initial surface reconstruction on the interface structure of HfO2/GaAs Yasuda T, Miyata N, Ohtake A Applied Surface Science, 254(23), 7565, 2008 |
| 4 |
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Zhou Y, Ahyi C, Isaacs-Smith T, Bozack M, Tin CC, Williams J, Park M, Cheng AJ, Park JH, Kim DJ, Wang D, Preble EA, Hanser A, Evans K Solid-State Electronics, 52(5), 756, 2008 |
| 5 |
High temperature NO annealing of deposited SiO2 and SiON films on n-type 4H-SiC Yano H, Hatayama T, Uraoka Y, Fuyuki T Materials Science Forum, 483, 685, 2005 |
| 6 |
Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices Li P, Rodriguez A, Yarlagadda B, Velampati R, Ayers JE, Jain FC Solid-State Electronics, 49(12), 2002, 2005 |
| 7 |
Interfacial bonding distribution and energy band structure of (Gd2O3)(1-x)(SiO2)(x) (x=0.5)/GaAs (001) system Yang JK, Kang MG, Kim WS, Park HH Applied Surface Science, 237(1-4), 251, 2004 |
| 8 |
Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization Ziane D, Bluet JM, Guillot G, Godignon P, Monserrat J, Ciechonski R, Syvajarvi M, Yakimova R, Chen L, Mawby P Materials Science Forum, 457-460, 1281, 2004 |
| 9 |
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H Applied Surface Science, 216(1-4), 497, 2003 |