| 1 |
Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs
Huang HS, Wang MC, Hsieh ZY, Chen SY, Chuang AE, Liu CH
Solid-State Electronics, 54(5), 527, 2010 |
| 2 |
Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks
Lu CC, Chang-Liao KS, Tsao CH, Wang TK
Solid-State Electronics, 54(11), 1474, 2010 |
| 3 |
Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure
Laha P, Panda AB, Dahiwale S, Date K, Patil KR, Barhai PK, Das AK, Banerjee I, Mahapatra SK
Thin Solid Films, 519(5), 1530, 2010 |
| 4 |
Leakage currents due to radiation induced electron-hole pairs in NMOS devices
Kim HS, Hyun JW, Noh SJ
Current Applied Physics, 6(2), 185, 2006 |
| 5 |
Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching
Cheng CL, Chang-Liao KS, Wang TK
Solid-State Electronics, 50(2), 103, 2006 |
| 6 |
Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics
Hamadeh E, Gunther NG, Niemann D, Rahman M
Solid-State Electronics, 50(6), 1156, 2006 |
| 7 |
Determination of film and surface recombination in thin-film SOI devices using gated-diode technique
Rudenko T, Rudenko A, Kilchytska V, Cristoloveanu S, Ernst T, Colinge JP, Dessard V, Flandre D
Solid-State Electronics, 48(3), 389, 2004 |
| 8 |
Work function of impurity-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean low-pressure CVD
Shim HY, Sakuraba M, Tsuchiya T, Murota J
Applied Surface Science, 212, 209, 2003 |
| 9 |
Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping
Fink C, Anil KG, Geiger H, Hansch W, Kaesen F, Schulze J, Sulima T, Eisele I
Solid-State Electronics, 46(3), 387, 2002 |
| 10 |
An improved model for substrate current of submicron MOSFETs
Gao X, Liou JJ, Bernier J, Croft G
Solid-State Electronics, 46(9), 1395, 2002 |
