검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Study of degradation in InGaP/InGaAs/Ge multi-junction solar cell characteristics due to irradiation-induced deep level traps using finite element analysis Kotamraju S, Sukeerthi M, Puthanveettil SE, Sankaran M Solar Energy, 178, 215, 2019 |
| 2 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D Solid-State Electronics, 61(1), 58, 2011 |
| 3 |
GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4 Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 16(3), 972, 1998 |