| 1 |
Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%
Schmidt J, Eilert M, Peters S, Wietler TF
Applied Surface Science, 421, 772, 2017 |
| 2 |
Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates
Schmidt J, Tetzlaff D, Bugiel E, Wietler TF
Journal of Crystal Growth, 457, 171, 2017 |
| 3 |
Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates
Wietler TF, Schmidt J, Tetzlaff D, Bugiel E
Thin Solid Films, 557, 27, 2014 |
| 4 |
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
Wietler TF, Bugiel E, Hofmann KR
Applied Surface Science, 255(3), 778, 2008 |
| 5 |
Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth
Takahashi R, Yonezawa Y, Ohtani M, Kawasaki A, Matsumoto Y, Koinuma H
Applied Surface Science, 252(7), 2477, 2006 |
| 6 |
Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer
Chang JJ, Hsieh TE, Liu CP, Wang YL
Thin Solid Films, 498(1-2), 85, 2006 |
| 7 |
Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region
Chen YM, Tu GC, Wang YL
Thin Solid Films, 498(1-2), 90, 2006 |
| 8 |
Ion beam as a probe to study the behavior of hydrogen on silicon surfaces
Oura K, Katayama M
Current Applied Physics, 3(1), 39, 2003 |
| 9 |
Epitaxial silicide interfaces in microelectronics
Tung RT, Ohmi S
Thin Solid Films, 369(1-2), 233, 2000 |
| 10 |
Antimony Adsorption on the Si(111) Surface with the 7X7 and Root-3X-Root-3-Ga Structures Studied by Scanning-Tunneling-Microscopy
Kusumi Y, Fujita K, Ichikawa M
Journal of Vacuum Science & Technology A, 15(3), 1603, 1997 |
