검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
High-quality ultra-flat BiSbTe3 films grown by MBE Liu W, Endicott L, Stoica VA, Chi H, Clarke R, Uher C Journal of Crystal Growth, 410, 23, 2015 |
| 2 |
Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source Luong TKP, Ghrib A, Dau MT, Zrir MA, Stoffel M, Le Thanh V, Daineche R, Le TG, Heresanu V, Abbes O, Petit M, El Kurdi M, Boucaud P, Rinnert H, Murota J Thin Solid Films, 557, 70, 2014 |
| 3 |
First-principles study of carbon atoms adsorbed on MgO(100) related to graphene growth Ryou J, Hong S Current Applied Physics, 13(2), 327, 2013 |
| 4 |
A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(111) heterostructure Li D, Ma J, Mukherjee S, Bi G, Zhao F, Elizondo SL, Shi Z Journal of Crystal Growth, 311(13), 3395, 2009 |
| 5 |
Relaxed germanium films on silicon (110) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 517(1), 272, 2008 |
| 6 |
Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots Jiang C, Kawazu T, Kobayashi S, Sakaki H Journal of Crystal Growth, 301, 828, 2007 |
| 7 |
Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopy Cruz-Hernandez E, Pulzara-Mora A, Rojas-Ramirez J, Contreras-Guerrero R, Vazquez D, Rodriguez AG, Mendez-Garcia VH, Lopez-Lopez M Journal of Crystal Growth, 301, 884, 2007 |
| 8 |
Growth process of beta-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy Ji SY, Wang JF, Lim JW, Isshiki M Applied Surface Science, 253(2), 444, 2006 |
| 9 |
Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 508(1-2), 6, 2006 |
| 10 |
Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates Oikawa T, Ishikawa F, Sato T, Hashizume T, Hasegawa H Applied Surface Science, 244(1-4), 84, 2005 |