검색결과 : 551건
| No. | Article |
|---|---|
| 1 |
Probing the Mg2Si/Si(111) heterojunction for photovoltaic applications Shevlyagin A, Chernev I, Galkin N, Gerasimenko A, Gutakovskii A, Hoshida H, Terai Y, Nishikawa N, Ohdaira K Solar Energy, 211, 383, 2020 |
| 2 |
Optical band gap, local work function and field emission properties of MBE grown beta-MoO3 nanoribbons Maiti P, Guha P, Singh R, Dash JK, Satyam PV Applied Surface Science, 476, 691, 2019 |
| 3 |
Step flow growth of Mn5Ge3 films on Ge(111) at room temperature Petit M, Boussadi A, Heresanu V, Ranguis A, Michez L Applied Surface Science, 480, 529, 2019 |
| 4 |
A study on Ga-Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy Zheng Y, Agrawal M, Dharmarasu N, Radhakrishnan K, Patwal S Applied Surface Science, 481, 319, 2019 |
| 5 |
Growth of single crystal non-polar (11(2)over-bar0) ZnSnN2 films on sapphire substrate Le DD, Ngo TS, Hong SK Applied Surface Science, 481, 819, 2019 |
| 6 |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum Lin KY, Wan HW, Chen KHM, Fanchiang YT, Chen WS, Lin YH, Cheng YT, Chen CC, Lin HY, Young LB, Cheng CP, Pi TW, Kwo J, Hong M Journal of Crystal Growth, 512, 223, 2019 |
| 7 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI Journal of Crystal Growth, 507, 357, 2019 |
| 8 |
Carbon-doped MBE GaN: Spectroscopic insights Pohl D, Solovyev VV, Roher S, Gartner J, Kukushkin IV, Mikolajick T, Grosser A, Schmult S Journal of Crystal Growth, 514, 29, 2019 |
| 9 |
Mn-doping effects on structural and magnetic properties of Ge nanocrystals on insulator Aouassa M, Zrir MA, Jadli I, Bandyopadhyay AK, Karaman I, Panczer G, Maaref H Applied Surface Science, 428, 1056, 2018 |
| 10 |
Influence of temperature and A1/N ratio on structural, chemical & electronic properties of epitaxial A1N films grown via PAMBE Jain SK, Mishra M, Aggarwal N, Krishna S, Gahtori B, Pandey A, Gupta G Applied Surface Science, 455, 919, 2018 |