화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric
Yew KS, Ang DS, Tang LJ, Cui K, Bersuker G, Lysaght PS
Journal of the Electrochemical Society, 158(10), H1021, 2011
2 Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry
Price J, Bersuker G, Lysaght PS
Journal of Vacuum Science & Technology B, 27(1), 310, 2009
3 Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
Goncharova LV, Dalponte M, Gustafsson T, Celik O, Garfunkel E, Lysaght PS, Bersuker G
Journal of Vacuum Science & Technology A, 25(2), 261, 2007
4 Phase separation in hafnium silicates for alternative gate dielectrics - Influence on the unoccupied states
Ramanathan S, McIntyre PC, Luning J, Lysaght PS, Yang Y, Chen ZQ, Stemmer S
Journal of the Electrochemical Society, 150(10), F173, 2003