검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
CHALCOGENIDE-BASED 2D MATERIALS Intrinsic nanoscale patterning Lyding JW Nature Materials, 16(7), 706, 2017 |
| 2 |
Imaging Excited Orbitals of Quantum Dots: Experiment and Electronic Structure Theory Nienhaus L, Goings JJ, Nguyen D, Wieghold S, Lyding JW, Li XS, Gruebele M Journal of the American Chemical Society, 137(46), 14743, 2015 |
| 3 |
Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy Mohseni PK, Behnam A, Wood JD, Zhao X, Yu KJ, Wang NC, Rockett A, Rogers JA, Lyding JW, Pop E, Li XL Advanced Materials, 26(22), 3755, 2014 |
| 4 |
Atomic precision lithography on Si Randall JN, Lyding JW, Schmucker S, Von Ehr JR, Ballard J, Saini R, Xu H, Ding Y Journal of Vacuum Science & Technology B, 27(6), 2764, 2009 |
| 5 |
The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons Ritter KA, Lyding JW Nature Materials, 8(3), 235, 2009 |
| 6 |
CARBON NANOTUBES A simple approach to superlattices Lyding JW Nature Nanotechnology, 4(9), 545, 2009 |
| 7 |
Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy Liu FY, Griffin PB, Plummer JD, Lyding JW, Moran JM, Richards JF, Kulig L Journal of Vacuum Science & Technology B, 22(1), 422, 2004 |
| 8 |
Atomic resolution scanning tunneling microscope study of single-wailed carbon nanotubes on GaAs(110) Ruppalt LB, Albrecht PM, Lyding JW Journal of Vacuum Science & Technology B, 22(4), 2005, 2004 |
| 9 |
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Cheng KG, Lee JJ, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW Journal of Vacuum Science & Technology B, 19(4), 1119, 2001 |
| 10 |
Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope Hersam MC, Guisinger NP, Lyding JW Journal of Vacuum Science & Technology A, 18(4), 1349, 2000 |