화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Long range, non-destructive characterization of GaN substrates for power devices
Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ
Journal of Crystal Growth, 506, 178, 2019
2 Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Beam E, Hobart KD, Feigelson BN
Journal of Crystal Growth, 499, 35, 2018
3 Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Hite JK, Anderson TJ, Luna LE, Gallagher JC, Mastro MA, Freitas JA, Eddy CR
Journal of Crystal Growth, 498, 352, 2018
4 Templated Nanopores for Robust Functional Surface Porosity in Poly(methyl methacrylate)
Tan WS, Du Y, Luna LE, Khitass Y, Cohen RE, Rubner MF
Langmuir, 28(37), 13496, 2012