검색결과 : 1건
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Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |