검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy using deep level transient spectroscopy Yoon SF, Lui PY, Zheng HQ Journal of Crystal Growth, 209(4), 653, 2000 |
| 2 |
Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy Yoon SF, Lui PY, Zheng HQ Journal of Crystal Growth, 212(1-2), 49, 2000 |