화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
Jennings MR, Perez-Tomas A, Davies M, Walker D, Zhu L, Losee P, Huang W, Balachandran S, Guy OJ, Covington JA, Chow TP, Mawby PA
Solid-State Electronics, 51(5), 797, 2007
2 Characteristics of trench-refilled 4H-SiC p-n junction diodes fabricated by selective epitaxial growth
Li C, Losee P, Seiler J, Bhat I, Chow TP
Materials Science Forum, 483, 159, 2005