검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Ballistic electron emission microscopy study of p-type 4H-SiC Ding Y, Park KB, Pelz JP, Los AV, Mazzola MS Materials Science Forum, 457-460, 1077, 2004 |
| 2 |
Influence of buffer layer on DC and RF performance of 4H SiC MESFET Los AV, Mazzola MS, Kajfez D, McDaniel BT, Smith CE, Kretchmer J, Rowland LB, Casady JB Materials Science Forum, 457-460, 1193, 2004 |
| 3 |
Nonlinear effects in Schottky junction under a periodic reverse bias with large amplitude Los AV, Mazzola MS Solid-State Electronics, 48(2), 321, 2004 |
| 4 |
Influence of junction potential distribution on effective impurity ionization time constants in SiC for admittance spectroscopy data analysis Los AV, Mazzola MS Materials Science Forum, 389-3, 545, 2002 |
| 5 |
Theoretical study of carrier freeze-out effects on admittance spectroscopy and frequency-dependent C-V measurements in SiC Los AV, Mazzola MS, Saddow SE Materials Science Forum, 338-3, 745, 2000 |