검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst Carole D, Brioude A, Pillonnet A, Lorenzzi J, Kim-Hak O, Cauwet F, Ferro G Journal of Crystal Growth, 320(1), 55, 2011 |
| 2 |
Growing 3C-SiC heteroepitaxial layers on alpha-SiC substrate by vapour-liquid-solid mechanism from the Al-Ge-Si ternary system Lorenzzi J, Ferro G, Cauwet F, Souliere V, Carole D Journal of Crystal Growth, 318(1), 397, 2011 |
| 3 |
Effect of initial substrate conditions on growth of cubic silicon carbide Vasiliauskas R, Marinova M, Syvajarvi M, Liljedahl R, Zoulis G, Lorenzzi J, Ferro G, Juillaguet S, Camassel J, Polychroniadis EK, Yakimova R Journal of Crystal Growth, 324(1), 7, 2011 |
| 4 |
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001) Lorenzzi J, Esteve R, Jegenyes N, Reshanov SA, Schoner A, Ferro G Journal of the Electrochemical Society, 158(6), H630, 2011 |
| 5 |
Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism Lorenzzi J, Zoulis G, Marinova M, Kim-Hak O, Sun JW, Jegenyes N, Peyre H, Cauwet F, Chaudouet P, Soueidan M, Carole D, Camassel J, Polychroniadis EK, Ferro G Journal of Crystal Growth, 312(23), 3443, 2010 |
| 6 |
Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates Kim-Hak O, Ferro G, Lorenzzi J, Carole D, Dazord J, Chaudouet P, Chaussende D, Miele P Thin Solid Films, 518(15), 4234, 2010 |
| 7 |
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate Kim-Hak O, Ferro G, Dazord J, Marinova M, Lorenzzi J, Polychroniadis E, Chaudouet P, Chaussende D, Miele P Journal of Crystal Growth, 311(8), 2385, 2009 |