화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 degrees rotated substrates
Doria RT, Martino JA, Simoen E, Claeys C, Pavanello MA
Solid-State Electronics, 90, 121, 2013
2 LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Simoen E, Claeys C
Solid-State Electronics, 63(1), 27, 2011
3 Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E
Solid-State Electronics, 53(6), 613, 2009
4 Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Guo W, Cretu B, Routoure JM, Carin R, Simoen E, Claeys C
Solid-State Electronics, 51(9), 1180, 2007