검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 159(6), S17, 2012 |
| 2 |
Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 158(5), G103, 2011 |
| 3 |
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin B, Cagnon J, Long RD, Hurley PK, Stemmer S, McIntyre PC Electrochemical and Solid State Letters, 12(8), G40, 2009 |
| 4 |
Conformationally constrained peptide mimetics: The use of a small lactam ring as an HIV-1 antigen constraint Long RD, Moeller KD Journal of the American Chemical Society, 119(50), 12394, 1997 |