검색결과 : 11건
No. | Article |
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1 |
SELECTED PAPERS FROM THE 6TH INTERNATIONAL SIGE TECHNOLOGY AND DEVICE MEETING (ISTDM 2012) Liu TJK, Koester SJ, Hartmann JM, Loo R, Yeo YC, Carroll M Solid-State Electronics, 83, 1, 2013 |
2 |
Highly scaled (L-g similar to 56 nm) gate-last Si tunnel field-effect transistors with I-ON > 100 mu A/mu m Loh WY, Jeon K, Kang CY, Oh J, Liu TJK, Tseng HH, Xiong WD, Majhi P, Jammy R, Hu CM Solid-State Electronics, 65-66, 22, 2011 |
3 |
Quasi-planar bulk CMOS technology for improved SRAM scalability Shin C, Tsai CH, Wu MH, Chang CF, Liu YR, Kao CY, Lin GS, Chiu KL, Fu CS, Tsai CT, Liang CW, Nikolic B, Liu TJK Solid-State Electronics, 65-66, 184, 2011 |
4 |
Interfacial Adhesion between Rough Surfaces of Polycrystalline Silicon and Its Implications for M/NEMS Technology Laboriante I, Bush B, Lee D, Liu F, Liu TJK, Carraro C, Maboudian R Journal of Adhesion Science and Technology, 24(15-16), 2545, 2010 |
5 |
Characterization of Nanometer-Scale Gap Formation Lee D, Tran H, Liu TJK Journal of the Electrochemical Society, 157(1), H94, 2010 |
6 |
Modified NiSi/Si Schottky Barrier Height by Nitrogen Implantation Kalra P, Vora N, Majhi P, Hung PY, Tseng HH, Jammy R, Liu TJK Electrochemical and Solid State Letters, 12(1), H1, 2009 |
7 |
Selective enhancement of SiO2 etch rate by ar-ion implantation for improved etch depth control Sun X, Lu Q, Takeuchi H, Balasubramanian S, Liu TJK Electrochemical and Solid State Letters, 10(9), D89, 2007 |
8 |
ALD refill of nanometer-scale gaps with high-kappa dielectric for advanced CMOS technologies Lee D, Seidel T, Dalton J, Liu TJK Electrochemical and Solid State Letters, 10(9), H257, 2007 |
9 |
Al-2% Si induced crystallization of amorphous silicon DelRio FW, Lai J, Ferralis N, Liu TJK, Maboudian R Electrochemical and Solid State Letters, 10(11), H337, 2007 |
10 |
Low pressure chemical vapor deposition of in situ-doped n- and p-type Si1-xGex films at 425 degrees C Vega RA, Liu TJK Journal of the Electrochemical Society, 154(9), H789, 2007 |