검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction Kawamura F, Tanpo M, Miyoshi N, Imade M, Yoshimura M, Mori Y, Kitaoka Y, Sasaki T Journal of Crystal Growth, 311(10), 3019, 2009 |
| 2 |
Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications Gomez-Herrera ML, Herrera-Perez JL, Rodriguez-Fragoso P, Riech I, Mendoza-Alvarez JG Applied Surface Science, 255(3), 761, 2008 |
| 3 |
Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source Naritsuka S, Nishinaga T, Tachikawa M, Mori H Journal of Crystal Growth, 211(1-4), 395, 2000 |
| 4 |
Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel Khan MN, Nishizawa S, Bahng W, Arai K Journal of Crystal Growth, 220(1-2), 75, 2000 |