검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Diffusion of Fe and Na in co-evaporated Cu(In, Ga) Se-2 devices on steel substrates Platzer-Bjorkman C, Jani S, Westlinder J, Linnarsson MK, Scragg J, Edoff M Thin Solid Films, 535, 188, 2013 |
| 2 |
Formation of precipitates in heavily boron doped 4H-SiC Linnarsson MK, Janson MS, Nordell N, Wong-Leung J, Schoner A Applied Surface Science, 252(15), 5316, 2006 |
| 3 |
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy Suchodolskis A, Hallen A, Linnarsson MK, Osterman J, Karlsson UO Thin Solid Films, 515(2), 611, 2006 |
| 4 |
Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC Alfieri G, Monakhov EV, Linnarsson MK, Svensson BG Materials Science Forum, 483, 365, 2005 |
| 5 |
Boron diffusion in intrinsic, n-type and p-type 4H-SiC Linnarsson MK, Janson MS, Shoner A, Konstantinov A, Svensson BG Materials Science Forum, 457-460, 917, 2004 |
| 6 |
Solubility limits of dopants in 4H-SiC Linnarsson MK, Zimmermann U, Wong-Leung J, Schoner A, Janson MS, Jagadish C, Svensson BG Applied Surface Science, 203, 427, 2003 |
| 7 |
Aluminum doping of epitaxial silicon carbide Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E Journal of Crystal Growth, 253(1-4), 340, 2003 |
| 8 |
Nitrogen doping of epitaxial silicon carbide Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E Journal of Crystal Growth, 236(1-3), 101, 2002 |
| 9 |
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy Syvajarvi M, Yakimova R, Kakanakova-Georgieva A, Sridhara SG, Linnarsson MK, Janzen E Journal of Crystal Growth, 237, 1230, 2002 |
| 10 |
Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum Kakanakova-Georgieva A, Yakimova R, Gueorguiev GK, Linnarsson MK, Syvajarvi M, Janzen E Journal of Crystal Growth, 240(3-4), 501, 2002 |